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| Ordering number : ENA0656 VEC2612 SANYO Semiconductors DATA SHEET VEC2612 Features * * N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications * * The best suited for inverter applications. The VEC2612 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting. 4V drive. Mounting height 0.75mm. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm20.8mm)1unit Mounted on a ceramic board (900mm20.8mm) Conditions N-channel 30 20 3 12 0.9 1.0 150 --55 to +150 P-channel -30 20 --3 -12 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=1.5A, VGS=10V ID=1A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 30 1 10 1.2 1.8 3.0 73 115 180 42 25 95 161 2.6 V A A V S m m pF pF pF Symbol Conditions Ratings min typ max Unit Marking : CR Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12407PE TI IM TC-00000407 No. A0656-1/6 VEC2612 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=16V, VDS=0V VDS=--10V, ID=-1mA VDS=--10V, ID=-1.5A ID=--1.5A, VGS=-10V ID=--1A, VGS=--4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-10V, ID=--3A VDS=--10V, VGS=-10V, ID=--3A VDS=--10V, VGS=-10V, ID=--3A IS=--3A, VGS=0V --30 --1 10 --1.0 2.0 3.4 65 117 510 115 78 11 17 53 35 11 2.4 1.7 --0.87 --1.2 86 168 --2.4 V A A V S m m pF pF pF ns ns ns ns nC nC nC V Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=3A VDS=10V, VGS=10V, ID=3A VDS=10V, VGS=10V, ID=3A IS=3A, VGS=0V Ratings min typ 7 2.8 18.5 4.4 4.9 0.93 0.93 0.85 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7012-002 Electrical Connection 8 0.25 7 6 5 0.3 0.15 8 7 65 0.25 1 2 2.9 3 0.65 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 2.8 2.3 Top view 0.75 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8 0.07 No. A0656-2/6 VEC2612 Switching Time Test Circuit [N-channel] VIN 10V 0V VIN ID=1.5A RL=10 VOUT VDD=15V 0V --10V VIN ID= --1.5A RL=10 VOUT [P-channel] VIN VDD= --15V D PW=10s D.C.1% D PW=10s D.C.1% G VEC2612 P.G 50 G S P.G 50 VEC2612 S 4.0 ID -- VDS 5.0V V 4.0 [Nch] --4.0 ID -- VDS V --5. 0 [Pch] 3.6 3.2 6.0V Drain Current, ID -- A 8.0V 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 V --8. 0 0 3. --2.5 --2.0 --1.5 --1.0 --0.5 0 V V Drain Current, ID -- A --6. 0 --3.0 V --4 . --3.5 0V 10.0 VGS=2.5V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 --10 VGS= --2.5V --0.1 V --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Drain-to-Source Voltage, VDS -- V 4.0 3.5 3.0 2.5 2.0 1.5 IT02942 ID -- VGS Drain-to-Source Voltage, VDS -- V --5 IT07767 [Nch] 25C ID -- VGS [Pch] Ta= -2 5C VDS=10V --4 VDS= --10V 75C Drain Current, ID -- A Drain Current, ID -- A --3 --2 Ta=7 5C --25C 1.0 0.5 0 0 0.5 1.0 1.5 Ta= 7 0 --0.5 --1.0 --1.5 --2.0 --1 5C 25 C 0 3.0 3.5 4.0 4.5 --2.5 --3.0 IT07768 IT02943 2.0 2.5 Gate-to-Source Voltage, VGS -- V 250 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 220 [Nch] Ta=25C RDS(on) -- VGS 25 C [Pch] Ta=25C --10 Static Drain-to-Source On-State Resistance, RDS(on) -- m 200 Static Drain-to-Source On-State Resistance, RDS(on) -- m 200 180 160 150 1.5A ID=1.0A ID= --1.5A 140 --1.0A 120 100 80 60 40 100 50 0 0 2 4 6 8 10 12 14 16 18 20 0 --2 --4 --6 --8 --25 C --12 IT11980 Gate-to-Source Voltage, VGS -- V IT11979 Gate-to-Source Voltage, VGS -- V No. A0656-3/6 VEC2612 250 RDS(on) -- Ta [Nch] 220 RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- m 200 Static Drain-to-Source On-State Resistance, RDS(on) -- m 200 180 160 140 120 100 80 60 40 20 --75 --50 --25 0 25 50 75 100 125 150 175 150 1.0 I D= 100 A =4V , VGS -I D= 1. VG 0A , --4V S= I D=1.5 50 =10V A, V GS , VG 1.5A I D= -- --10V S= 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C 10 IT11981 Ambient Temperature, Ta -- C 10 IT11982 yfs -- ID [Nch] Forward Transfer Admittance, yfs -- S yfs -- ID [Pch] VDS= --10V Forward Transfer Admittance, yfs -- S 7 5 3 2 VDS=10V 7 5 C 25 3 2 1.0 7 5 3 2 = Ta --2 C 5 C 75 Ta= C --25 C 75 1.0 C 25 7 5 3 --0.1 2 3 5 7 --1.0 2 3 5 7 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.2 0.3 0.4 IT02946 IS -- VSD Drain Current, ID -- A --10 7 5 3 2 IT07771 [Nch] VGS=0V VGS=0V IS -- VSD [Pch] Source Current, IS -- A Source Current, IS -- A --0.1 7 5 3 2 --0.01 7 5 3 2 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 C 25C Ta=7 5 --25 C 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 --0.001 --0.3 Diode Forward Voltage, VSD -- V 100 7 IT02947 SW Time -- ID Diode Forward Voltage, VSD -- V 2 100 5C 25 C --25 C --1.0 7 5 3 2 Ta= 7 IT07772 [Nch] SW Time -- ID td(off) tf [Pch] Switching Time, SW Time -- ns Switching Time, SW Time -- ns 5 3 2 VDD=15V VGS=10V VDD= --15V VGS= --10V 7 5 3 2 td(off) 10 7 5 3 2 td(on) tf td(on) 10 7 5 3 2 1.0 --0.1 tr tr 1.0 0.1 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 10 IT02948 7 2 3 5 7 --1.0 2 3 5 7 Drain Current, ID -- A IT07773 No. A0656-4/6 VEC2612 1000 7 5 Ciss, Coss, Crss -- VDS [Nch] f=1MHz 1000 7 5 Ciss, Coss, Crss -- VDS Ciss [Pch] f=1MHz Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF 3 2 Ciss 3 2 100 7 5 100 7 5 3 Coss Coss 3 2 10 0 5 10 15 20 25 30 IT02949 Crss Crss 2 0 --5 --10 --15 --20 --25 --30 IT07774 Drain-to-Source Voltage, VDS -- V 10 9 VGS -- Qg VDS=10V ID=3A Drain-to-Source Voltage, VDS -- V --10 --9 [Nch] VDS= --10V ID= --3A VGS -- Qg [Pch] Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 IT02950 Gate-to-Source Voltage, VGS -- V --8 --7 --6 --5 --4 --3 --2 --1 0 0 2 4 6 8 10 12 14 IT07775 Total Gate Charge, Qg -- nC 3 2 10 7 5 Total Gate Charge, Qg -- nC 3 2 --10 7 5 ASO IDP=12A [Nch] 10s 1m ASO IDP= --12A ID= --3A 10 [Pch] 10s 10 s Drain Current, ID -- A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Drain Current, ID -- A ID=3A 0 10 s ms 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 10 1m 0s s ms DC op 10 era 0m s DC 10 op tio era 0m s Operation in this area is limited by RDS(on). n( tio Ta = n( 25 C ) Operation in this area is limited by RDS(on). Ta = 25 C ) 0.01 0.1 Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm) 1unit 2 3 5 7 1.0 2 3 5 7 10 2 3 5 --0.01 --0.1 Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm) 1unit 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 1.2 Drain-to-Source Voltage, VDS -- V IT11983 PD -- Ta [Nch / Pch] Drain-to-Source Voltage, VDS -- V IT11984 Mounted on a ceramic board (900mm20.8mm) Allowable Power Dissipation, PD -- W 1.0 0.9 0.8 To t 0.6 al 1u 0.4 di ss nit ip ati on 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT11985 No. A0656-5/6 VEC2612 Note on usage : Since the VEC2612 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2007. Specifications and information herein are subject to change without notice. PS No. A0656-6/6 |
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